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Rev. 2.0, 11/00, page 839 of 1037
29.2.7
FLASH Memory Characteristics
Table 29.12 shows the flash memory characteristics.
Table 29.12 Flash Memory Characteristics (Preliminary)
Conditions: Vcc = 5.0 V
±
10%, AVcc = 5.0 V
±
10%, Vss = AVss = 0 V, Ta = 0 to +75
°
C
(operating temperature range at programming/erasing)
Item
Symbol
Test
conditions
Min
Typ
Max
Unit
Programming time
*
1
*
2
*
4
t
P
10
200
ms/
32 bytes
Erasing time
*
1
*
3
*
5
t
E
100
1200
ms/
block
No. of reprogramming
N
WEC
100
Times
Wait time after SWE-bit setting
*
1
x
10
µ
s
Wait time after PSU-bit setting
*
1
y
50
µ
s
Wait time after P-bit setting
*
1
*
4
z
150
200
µ
s
Wait time after P-bit clearing
*
1
α
10
µ
s
Wait time after PSU-bit clearing
*
1
β
10
µ
s
Wait time after PV-bit setting
*
1
γ
4
µ
s
Wait time after dummy write
*
1
ε
2
µ
s
Wait time after PV-bit clearing
*
1
η
4
µ
s
At
programming
Maximum No. of programmings
*
1
*
4
*
5
N
When z
= 200
µ
s
1000
Times
Wait time after SWE-bit setting
*
1
x
10
µ
s
Wait time after ESU-bit setting
*
1
y
200
µ
s
Wait time after E-bit setting
*
1
*
6
z
5
10
ms
Wait time after E-bit clearing
*
1
α
10
µ
s
Wait time after ESU-bit clearing
*
1
β
10
µ
s
Wait time after EV-bit setting
*
1
γ
20
µ
s
Wait time after dummy write
*
1
ε
2
µ
s
Wait time after EV-bit clearing
*
1
η
5
µ
s
At erasing
Maximum No. of erasings
*
1
*
6
N
120
240
Times
Notes: 1. Perform each time setting according to the programming/erasing algorithm.
2. Programming time per 32 bytes (total time of setting P-bit of the flash memory control
register. Programming verify time is not included).
Summary of Contents for Hitachi H8S/2191
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