Rev. 2.0, 11/00, page 136 of 1037
7.3.3
Erase Block Registers 1 and 2 (EBR1, EBR2)
7
—
0
—
6
—
0
—
5
—
0
—
4
—
0
—
3
—
0
—
0
EB8
0
R/W
2
—
0
—
1
EB9
0
R/W
7
EB7
0
R/W
6
EB6
0
R/W
5
EB5
0
R/W
4
EB4
0
R/W
3
EB3
0
R/W
0
EB0
0
R/W
2
EB2
0
R/W
1
EB1
0
R/W
Bit
EBR1
Initial value
R/W
:
:
:
:
Bit
EBR2
Initial value
R/W
:
:
:
:
EBR1 and EBR2 are registers that specify the flash memory erase area block by block; bits 1
and 0 in EBR1 (128-kbyte versions only) and bits 7 to 0 in EBR2 are readable/writable bits.
EBR1 and EBR2 are each initialized to H'00 by a reset, in power-down state (excluding the
medium-speed mode, module stop mode, and sleep mode), when a low level is input to the FWE
pin, or when a high level is input to the FWE pin and the SWE bit in FLMCR1 is not set. When
a bit in EBR1 or EBR2 is set, the corresponding block can be erased. Other blocks are erase-
protected. Set only one bit in EBR1 or EBR2 (more than one bit cannot be set).
The flash memory block configuration is shown in table 7.4.
Table 7.4
Flash Memory Erase Blocks
Block (Size)
128-kbyte Versions
Address
EB0 (1 kbyte)
H'000000 to H'0003FF
EB1 (1 kbyte)
H'000400 to H'0007FF
EB2 (1 kbyte)
H'000800 to H'000BFF
EB3 (1 kbyte)
H'000C00 to H'000FFF
EB4 (28 kbytes)
H'001000 to H'007FFF
EB5 (16 kbytes)
H'008000 to H'00BFFF
EB6 (8 kbytes)
H'00C000 to H'00DFFF
EB7 (8 kbytes)
H'00E000 to H'00FFFF
EB8 (32 kbytes)
H'010000 to H'017FFF
EB9 (32 kbytes)
H'018000 to H'01FFFF
Summary of Contents for Hitachi H8S/2191
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