Renesas Hitachi H8S/2191, Hardware Manual, Page: 234 / 1065

Rev. 2.0, 11/00, page 207 of 1037
8.8.4 Memory Read Mode
(1) After the end of an auto-program, auto-erase, or status read operation, the command wait
state is entered. To read memory contents, a transition must be made to memory read mode
by means of a command write before the read is executed.
(2) Command writes can be performed in memory read mode, just as in the command wait state.
(3) Once memory read mode has been entered, consecutive reads can be performed.
(4) After power-on, memory read mode is entered.
Table 8.12 AC Characteristics in Memory Read Mode
(Conditions: V
CC
= 5.0 V
±
10%, V
SS
= 0 V, Ta = 25
°
C
±
5
°
C)
Item Symbol Min Max Unit
Command write cycle t
nxtc
20
 µ
s
&(
hold time t
ceh
0

ns
&(
setup time t
ces
0

ns
Data hold time t
dh
50

ns
Data setup time t
ds
50

ns
Write pulse width t
wep
70

ns
:(
rise time t
r

30 ns
:(
fall time t
f

30 ns
CE
ADDRESS
DATA H'00
OE
WE
Command write
t
wep
t
ceh
t
dh
t
ds
t
f
t
r
t
nxtc
Note: Data is latched on the rising edge of WE.
t
ces
Memory read mode
ADDRESS STABLE
DATA
Figure 8.16 Memory Read Mode Timing Waveforms after Command Write