Flash Memory
MPC5565 Microcontroller Reference Manual, Rev. 1.0
Freescale Semiconductor
13-17
13.3.2.6
High Address Space Block Select Register (FLASH_HSR)
The FLASH_HSR allows the application to select the high address flash blocks on which to operate.
13.3.2.7
Address Register (FLASH_AR)
The FLASH_AR provides the first failing address in the event of ECC event error (FLASH_MCR[EER]
set), as well as providing the address of a failure that occurs in a state machine operation
(FLASH_MCR[PEG] cleared). ECC event errors take priority over state machine errors. This is especially
valuable in the event of a RWW operation, where the read senses an ECC error and the state machine fails
simultaneously. This address is always a doubleword address that selects 64 bits.
In normal operating mode, the FLASH_AR is not writable.
Address: Base (0xC3F8_8000) + 0x0014
Access: R/W
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
R 0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
HBSEL
W
Reset 0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Figure 13-10. High Address Space Block Select Register (FLASH_HSR)
Table 13-11. FLASH_HSR Field Descriptions
Field
Description
0–19
Reserved.
20–31
HBSEL[11:0]
High address space block select. Has the same characteristics as MSEL. For more information refer to
Section 13.3.2.5, “Low/Mid Address Space Block Select Register (FLASH_LMSR)
.”
0b0000 High address space blocks are
not
selected for erase
0b0001 One high address space block is selected for erase
0b0011 Two high address space blocks are selected for erase
0b0111 Three high address space blocks are selected for erase
0b1111 Four high address space blocks are selected for erase
0b0001_1111 Five high address space blocks are selected for erase
0b0011_1111 Six high address space blocks are selected for erase
0b0111_1111 Seven high address space blocks are selected for erase
0b1111_1111 Eight high address space blocks are selected for erase
0b0001_1111_1111 Nine high address space blocks are selected for erase
0b0011_1111_1111 Ten high address space blocks are selected for erase
0b0111_1111_1111 Eleven high address space blocks are selected for erase
0b1111_1111_1111 Twelve high address space blocks are selected for erase
Address: Base (0xC3F8_8000) + 0x0018
Access: R/W
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
R 0
0
0
0
0
0
0
0
0
0
ADDR
0
0
0
W
Reset 0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Figure 13-11. Address Register (FLASH_AR)
Summary of Contents for MPC5565
Page 18: ...MPC5565 Microcontroller Reference Manual Devices Supported MPC5565 MPC5565 RM Rev 1 0 09 2007...
Page 34: ...MPC5565 Reference Manual Rev 1 0 Freescale Semiconductor 15...
Page 35: ...MPC5565 Reference Manual Rev 1 0 16 Freescale Semiconductor...
Page 553: ...Flash Memory MPC5565 Microcontroller Reference Manual Rev 1 0 13 38 Freescale Semiconductor...
Page 559: ...SRAM MPC5565 Microcontroller Reference Manual Rev 1 0 14 6 Freescale Semiconductor...
Page 973: ...Preface MPC5565 Microcontroller Reference Manual Rev 1 0 21 36 Freescale Semiconductor...
Page 1153: ...Calibration MPC5565 Microcontroller Reference Manual Rev 1 0 B 8 Freescale Semiconductor...
