Rev. 1.0, 02/00, page 164 of 1141
7.8.6
Auto-Erase Mode
AC Characteristics
Table 7.15
AC Characteristics in Auto-Erase Mode
−−−−
Preliminary
−−−−
Conditions: V
CC
= 5.0 V
±
10%, V
SS
= 0 V, Ta = 25
°
C
±
5
°
C
Item
Symbol
Min
Max
Unit
Notes
Command write cycle
t
nxtc
20
µ
s
&(
hold time
t
ceh
0
ns
&(
setup time
t
ces
0
ns
Data hold time
t
dh
50
ns
Data setup time
t
ds
50
ns
Write pulse width
t
wep
70
ns
Status polling start time
t
ests
1
ms
Status polling access time
t
spa
150
ns
Memory erase time
t
erase
100
40000
ms
:(
rise time
t
r
30
ns
:(
fall time
t
f
30
ns
Erase setup time
t
ens
100
ns
Erase end setup time
t
enh
100
ns
CE
FWE
A18 to A0
IO5 to IO0
IO6
IO7
OE
WE
t
erase
(100 to 40000ms)
t
ests
t
spa
t
nxtc
t
nxtc
t
ces
t
ceh
t
dh
CL
in
DL
in
t
ds
t
wep
t
ens
H'00
H'20
H'20
t
enh
Erase end
identification signal
Erase normal end
identification signal
t
f
t
r
Figure 7.21 Auto-Erase Mode Timing Waveforms