Freescale Semiconductor MC9S12ZVHL32, Reference Manual

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Appendix G NVM Electrical Parameters
S12ZVHY/S12ZVHL Family Reference Manual Rev. 1.05
804 Freescale Semiconductor
G.2 NVM Reliability Parameters
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The data retention and program/erase cycling failure rates are specified at the operating conditions noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
NOTE
All values shown in Table G-2 are preliminary and subject to further
characterization.
19 Program EEPROM (3 Word) 204 3663
t
DPGM_3
0.31 0.32 0.66 14.91 ms
20 Program EEPROM (4 Word) 272 4666
t
DPGM_4
0.40 0.42 0.86 19.00 ms
21 Erase EEPROM Sector 5015 810
t
DERSPG
4.80 5.04 20.49 38.85 ms
22 Protection Override 0 475
t
PRTOVRD
14.84 14.84 14.84 475.00 us
1. Minimum times are based on maximum f
NVMOP
and maximum f
NVMBUS
2. Typical times are based on typical f
NVMOP
and typical f
NVMBUS
3. Maximum times are based on typical f
NVMOP
and typical f
NVMBUS
plus aging
4. Worst times are based on minimum f
NVMOP
and minimum f
NVMBUS
plus aging
5. Affected by Pflash size
6. Affected by EEPROM size
Table G-2. NVM Reliability Characteristics
NUM C Rating Symbol Min Typ Max Unit
Program Flash Arrays
1 C Data retention at an average junction temperature of T
Javg
= 85

C
(1)
after up to 10,000 program/erase cycles
1. T
Javg
does not exceed 85

C in a typical temperature profile over the lifetime of a consumer, industrial or automotive application.
t
NVMRET
20 100
(2)
— Years
2 C Program Flash number of program/erase cycles
(-40

C

tj

150

C

n
FLPE
10K 100K
(3)
— Cycles
EEPROM Array
3 C Data retention at an average junction temperature of T
Javg
= 85

C
1
after up to 100,000 program/erase cycles
t
NVMRET
5 100
2
— Years
4 C Data retention at an average junction temperature of T
Javg
= 85

C
1
after up to 10,000 program/erase cycles
t
NVMRET
10 100
2
— Years
5 C Data retention at an average junction temperature of T
Javg
= 85

C
1
after less than 100 program/erase cycles
t
NVMRET
20 100
2
— Years
6 C EEPROM number of program/erase cycles (-40

C

tj

150

C

n
FLPE
100K 500K
3
— Cycles
Table G-1. NVM Timing Characteristics (32 MHz - 64KB PFlash - 2KB EEPROM)
Num Command
f
NVMOP
cycle
f
NVMBUS
cycle
Symbol
Min
(1)
Typ
(2)
Max
(3)
Worst
(4)
Unit