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TC1784
Program Memory Unit (PMU)
User´s Manual
5-16
V1.1, 2011-05
PMU, V1.47
buffer becomes the active EEPROM region. The “old” DFLASH bank can be erased,
when the active EEPROM region has been switched to the “new” DFLASH bank.
As a result of the continuously changing assignment of the active EEPROM region in a
circular buffer, the DFLASH memory cells of one EEPROM region can be
erased/programmed 4-times as often as one physical region, resulting in an 4-fold
endurance for one EEPROM region. Additionally, a reduced retention is assumed for
EEPROM data supporting a higher endurance (e.g. 30000 for Data Flash with retention
of 5 years). Thus, for the above described example with four regions and with a retention
of 5 years, the endurance for an emulated EEPROM region is increased to 120000
write/erase cycles.
Example 2
For emulation of more complex EEPROM structures, several EEPROM region types can
be defined in parallel, with different endurance or update requirements. Each region type
is identified by an identification label. The active region of each type is identified by the
highest address of all regions with the same label. If a “new” Flash bank is entered, all
active regions are copied into the new bank, so that the “old” DFLASH bank can be
erased. It is recommended to delay the copy (and erase) operation so that more active
regions in the “old” bank are renewed (updated) in the “new” bank anyway.
Depending on the number of pages used for dynamic programming of EEPROM data,
the endurance of an EEPROM region can additionally be optimized. If only that part of
EEPROM region, which has been changed, is re-programmed during update-operation,
the endurance is further increased, because not always a full EEPROM region is wasted
when only one wordline (two pages) has to be updated. It is thus necessary to indicate
old (invalid) wordlines. Therefore, a wordline can be marked as invalid wordline by re-
programming one (or both) pages of the wordline with all-ones (only this kind of twofold
programming of a page is allowed in Data Flash and in Program Flash). For this
“invalidation stamp”, a correct ECC code is ensured because the ECC algorithm is
selected in that way that either for the erased state (all zeros) or for the invalidated state
(all ones) the according ECC code (also all zeros or all ones) is correct.
Note: Only two page writes for one wordline are allowed. Therefore, if a third page write
is executed for the invalidation stamp, not only this page, but the whole wordline
including this page is in an invalid state.
Summary of Contents for TC1784
Page 1: ...User s Manual V1 1 2011 05 Microcontrollers TC1784 32 Bit Single Chip Microcontroller ...
Page 3: ...User s Manual V1 1 2011 05 Microcontrollers TC1784 32 Bit Single Chip Microcontroller ...
Page 950: ...TC1784 Direct Memory Access Controller DMA User s Manual 11 132 V1 1 2011 05 DMA V3 03 ...
Page 1949: ...TC1784 General Purpose Timer Array GPTA v5 User s Manual 21 297 V1 1 2011 05 GPTA v5 V1 14 ...
Page 2350: ...w w w i n f i n e o n c o m Published by Infineon Technologies AG Doc_Number ...