PRELIMINARY
ELECTRICAL DATA
S3C6400X
RISC MICROPROCESSOR
41-6
Preliminary product information describe products that are in development,
for which full characterization data and associated errata are not yet available.
Specifications and information herein are subject to change without notice.
I
OZ
Tri-State Output
Leakage Current
Vout=VSS or VDD
-10
10 uA
I
DD
Quiescent supply
current
100 uA
Temp.
Ambient Temperature
-40
25
85
°
C
CIN Input
capacitance
Any Input and Bidirectional
buffers
4 pF
COUT
Output
capacitance
Any Output buffer
4 pF
Table 41-4. Special Memory DDR I/O PAD DC Electrical Characteristics
Symbol Parameter Min
Typ
Max
Unit
VDDM0
VDDM1
Output supply voltage
1.65
1.8
2.5
3.0
2.75
V
VDDINT Internal
Voltage 0.9
1.0
1.1
V
Temp Ambient
Temperature -40
25
85
°
C
V
IH
dc Input Logic High
0.8*VDDM
0/1
- - V
V
IL
dc Input Logic Low
-
-
0.2*VDDM
0/1
V
I
IH
High Level Input Current
-10
-
10
uA
I
IL
Low Level Input Current
-10
-
10
uA
I
IH
High Level Input Current (with Pull
Down)
20 - 60
uA
I
IL
Low Level Input Current (with Pull Up)
-60
-
-20
uA
V
OH
Output High Voltage(@Ioh=-100uA)
VDDM0/1-
0.2
- - V
V
OL
Output Low Voltage(@Iol=100uA)
-
-
0.2
V
Table 41-5. USB DC Electrical Characteristics
Symbol Parameter
Condition Min Max
Unit