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FCMD
Command
Program flash
Function
0x02
Program Check
×
Tests previously-programmed
locations at margin read
levels.
0x03
Read Resource
IFR, ID
Read 4 bytes from program
flash IFR or version ID.
0x06
Program Longword
×
Program 4 bytes in a program
flash block.
0x09
Erase Flash Sector
×
Erase all bytes in a program
flash sector.
0x40
Read 1s All Blocks
×
Verify that the program flash
block is erased then release
MCU security.
0x41
Read Once
IFR
Read 4 bytes of a dedicated
64 byte field in the program
flash 0 IFR.
0x43
Program Once
IFR
One-time program of 4 bytes
of a dedicated 64-byte field in
the program flash 0 IFR.
0x44
Erase All Blocks
×
Erase the program flash
block, verify-erase and
release MCU security.
NOTE: An erase is only
possible when all
memory locations
are unprotected.
0x45
Verify Backdoor Access Key
×
Release MCU security after
comparing a set of user-
supplied security keys to
those stored in the program
flash.
32.4.9 Margin Read Commands
The Read-1s commands (Read 1s All Blocks and Read 1s Section) and the Program
Check command have a margin choice parameter that allows the user to apply non-
standard read reference levels to the program flash array reads performed by these
commands. Using the preset 'user' and 'factory' margin levels, these commands perform
their associated read operations at tighter tolerances than a 'normal' read. These non-
standard read levels are applied only during the command execution. All simple
(uncommanded) flash array reads to the MCU always use the standard, un-margined, read
reference level.
Only the 'normal' read level should be employed during normal flash usage. The non-
standard, 'user' and 'factory' margin levels should be employed only in special cases.
They can be used during special diagnostic routines to gain confidence that the device is
not suffering from the end-of-life data loss customary of flash memory devices.
Chapter 32 Flash Memory Module (FTFA)
KV4x Reference Manual, Rev. 2, 02/2015
Freescale Semiconductor, Inc.
Preliminary
633
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