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Table 16-9. Read 1s Block Command Error Handling (continued)
Error Condition
Error Bit
Program flash is selected and the address is out of program flash range
FSTAT[ACCERR]
Data flash is selected and the address is out of data flash range
FSTAT[ACCERR]
Data flash is selected with EEPROM enabled
FSTAT[ACCERR]
Flash address is not 64-bit aligned
FSTAT[ACCERR]
Read-1s fails
FSTAT[MGSTAT0]
16.5.11.2 Read 1s Section command
The Read 1s Section command checks if a section of program flash or data flash memory
is erased to the specified read margin level. The Read 1s Section command defines the
starting address and the number of phrases to be verified.
Table 16-10. Read 1s Section Command FCCOB Requirements
FCCOB Number
FCCOB Contents [7:0]
0
0x01 (RD1SEC)
1
Flash address [23:16] of the first phrase to be verified
2
Flash address [15:8] of the first phrase to be verified
3
of the first phrase to be verified
4
Number of phrases to be verified [15:8]
5
Number of phrases to be verified [7:0]
6
Read-1 Margin Choice
1. Must be 64-bit aligned (Flash address [2:0] = 000).
Upon clearing CCIF to launch the Read 1s Section command, the FTFE sets the read
margin for 1s according to
and then reads all locations within the specified
section of flash memory.
If the FTFE fails to read all 1s (i.e. the flash section is not erased), the
FSTAT(MGSTAT0) bit is set. The CCIF flag sets after the Read 1s Section operation
completes.
Table 16-11. Margin Level Choices for Read 1s Section
Read Margin Choice
Margin Level Description
0x00
Use the 'normal' read level for 1s
0x01
Apply the 'User' margin to the normal read-1 level
0x02
Apply the 'Factory' margin to the normal read-1 level
Functional Description
Kinetis KE1xZ256 Sub-Family Reference Manual, Rev. 3, 07/2018
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NXP Semiconductors
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