CHAPTER 5 MEMORY ACCESS CONTROL FUNCTION
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User’s Manual U14359EJ4V0UM
5.4
DRAM Controller (SDRAM)
5.4.1 Features
•
Burst length: 1
•
Wrap type: Sequential
•
CAS latency: 2 and 3 supported
•
4 types of SDRAM can be assigned to 4 memory blocks.
•
Row and column address multiplex widths can be changed.
•
Waits (0 to 3 waits) can be inserted between the bank active command and the read/write command.
•
Supports CBR refresh and CBR self-refresh.
5.4.2 SDRAM
connection
An example of connection to SDRAM is shown below.
Figure 5-11. Example of Connection to SDRAM
A0 to A11
A12, A13
DQ0 to DQ15
CLK
CKE
CS
RAS
CAS
LDQM
UDQM
WE
64 Mb SDRAM
(1 Mword
×
16 bits
×
4 banks)
A1 to A12
A21, A22
Note
D0 to D15
SDCLK
SDCKE
CSn
SDRAS
SDCAS
LDQM
UDQM
WE
V850E/MA1
Note
The address signals to be used differ depending on the SDRAM product.
Remark
n = 1, 3, 4, 6