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User’s Manual U14359EJ4V0UM
CHAPTER 16 FLASH MEMORY (
µµµµ
PD70F3107A)
The
µ
PD70F3107A is the flash memory version of the V850E/MA1 and it has an on-chip 256 KB flash memory
configured as two 128 KB areas.
Caution
There are differences in noise immunity and noise radiation between the flash memory and
mask ROM versions. When preproducing an application set with the flash memory version and
then mass producing it with the mask ROM version, be sure to conduct sufficient evaluations
on the commercial samples (CS) (not engineering samples (ES)) of the mask ROM versions.
Writing to flash memory can be performed with memory mounted on the target system (on board). A dedicated
flash programmer is connected to the target system to perform writing.
The following can be considered as the development environment and the applications using flash memory.
• Software can be changed after the V850E/MA1 is solder mounted on the target system.
• Small scale production of various models is made easier by differentiating software.
• Data adjustment in starting mass production is made easier.
16.1 Features
• All area batch erase, or erase in block units (128 KB)
• Communication through serial interface from the dedicated flash programmer
• Erase/write voltage: V
PP
= 7.8 V
• On-board programming
• Flash memory programming by self-programming in block units (128 KB) is possible
16.2 Writing with Flash Programmer
Writing can be performed either on-board or off-board by the dedicated flash programmer.
(1) On-board programming
The contents of the flash memory are rewritten after the V850E/MA1 is mounted on the target system. Mount
connectors, etc., on the target system to connect the dedicated flash programmer.
(2) Off-board programming
Writing to flash memory is performed by the dedicated program adapter (FA Series), etc., before mounting
the V850E/MA1 on the target system.
Remark
The FA Series is a product of Naito Densei Machida Mfg. Co., Ltd.
