TC1796
System Units (Vol. 1 of 2)
Program Memory Unit
User’s Manual
7-7
V2.0, 2007-07
PMU, V2.0
increase the endurance of a logical sector, its corresponding physical sector can
be erased and reprogrammed after every 50 erase/program cycles of the logical
sector.
7.2.2
Data Flash Overview
The on-chip DFLASH has a capacity of 128 Kbyte, organized in two independent
banks/sectors of 64 Kbyte each, DB0/DS0 and DB1/DS1. The structure with two
independent Flash banks makes it possible executing read accesses to one bank while
erasing or programming the other array bank. Erase and programming operations can
also be performed simultaneously in the two DFLASH banks, whereby an erase
operation of one DFLASH bank is suspended by a programming operation of the other
DFLASH bank, and automatically resumed afterwards. Each DFLASH bank can be
erased only completely.
Figure 7-4
DFLASH Structure
For programming of the DFLASH, the data for one page (32 words = 128 bytes) must be
loaded into an assembly buffer using fast CPU accesses before this assembly buffer is
programmed into one page of the data Flash with one programming command operation.
Thus, the programming width of the DFLASH is always 128 bytes. Programming of
single words, bytes, or bits is not supported. The DFLASH uses the same JEDEC-
standard based command sequences as the program Flash does.
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MCA05644
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DFLASH
128 byte
128 byte
128 byte
128 byte
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128 byte
128 byte
128 byte
128 byte
64 Kbyte
DFLASH Bank 1 (DB1)
DFLASH Sector 1 (DS1)
64 Kbyte
DFLASH Bank 0 (DB0)
DFLASH Sector 0 (DS0)
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