Chapter 17 Flash Memory
MPC5602P Microcontroller Reference Manual, Rev. 4
Freescale Semiconductor
329
Figure 17-9. Code Flash module structure
17.3.4
Functional description
17.3.4.1
Macrocell structure
The Flash macrocell provides high density non-volatile memories with high-speed read access.
The Flash module is addressable by word (32 bits) or double-word (64 bits) for programming, and by page
(128 bits) for reads. Reads done to the Flash always return 128 bits, although read page buffering may be
done in the platform BIU.
Each read of the Flash module retrieves a page, or 4 consecutive words (128 bits) of information. The
address for each word retrieved within a page differ from the other addresses in the page only by address
bits (3:2).
The Flash page read architecture supports both cache and burst mode at the BIU level for high-speed read
application.
The Flash module supports fault tolerance through Error Correction Code (ECC) and/or error detection.
The ECC implemented within the Flash module will correct single bit failures and detect double bit
failures.
The Flash module uses an embedded hardware algorithm implemented in the memory interface to program
and erase the Flash core.
Control logic that works with the software block enables, and software lock mechanisms, is included in
the embedded hardware algorithm to guard against accidental program/erase.
+ 16 KB TestFlash
HV generator
Matrix
Registers
Interface
Flash Bank 0
Interface
+ 16 KB Shadow
Flash
Controller
Code Flash
Program/Erase
Registers
256 KB