Flash Registers
575
SPRUHE8E – October 2012 – Revised November 2019
Copyright © 2012–2019, Texas Instruments Incorporated
Internal Memory
5.4.4.11 Data High Test Register (FDATAH_TEST)
Figure 5-132. Data High Test Register (FDATAH_TEST)
31
0
FDATAH
R/W-0
LEGEND: R/W = Read/Write; R = Read only; -
n
= value after reset
Table 5-140. Data High Test Register (FDATAH_TEST) Field Descriptions
Bit
Field
Value
Description
31-0
FDATAH
High double word of selected 64-bit data. User-configurable bits 63:32 of the selected data blocks
in ECC test mode.
5.4.4.12 Data Low Test Register (FDATAL_TEST)
Figure 5-133. Data Low Test Register (FDATAL_TEST)
31
0
FDATAL
R/W-0
LEGEND: R/W = Read/Write; R = Read only; -
n
= value after reset
Table 5-141. Data Low Test Register (FDATAL_TEST) Field Descriptions
Bit
Field
Value
Description
31-0
FDATAL
Low double word of selected 64-bit data. User-configurable bits 31:0 of the selected data blocks in
ECC test mode.
5.4.4.13 ECC Test Address Register (FADDR_TEST)
Figure 5-134. ECC Test Address Register (FADDR_TEST)
31
24 23
3
2
0
Reserved
ADDR
Reserved
R-0
R/W-0
R-0
LEGEND: R/W = Read/Write; R = Read only; -
n
= value after reset
Table 5-142. ECC Test Address Register (FADDR_TEST) Field Descriptions
Bit
Field
Value
Description
31-24
Reserved
Reserved
23-3
ADDR
Address for selected 64-bit data. User-configurable address bits of the selected data in
ECC test mode. Left-shift the address by one bit (to provide byte address) and ignore
the three least significant bits of the address and write the remaining address bits in
this field.
2-0
Reserved
Reserved
5.4.4.14 ECC Test Register (FECC_TEST)
Figure 5-135. ECC Test Register (FECC_TEST)
31
8
7
0
Reserved
ECC
R-0
R/W-0
LEGEND: R/W = Read/Write; R = Read only; -
n
= value after reset