45.11. NVM Characteristics
Table 45-30. NVM Max Speed Characteristics
Conditions
CPU F
max
(MHz)
0WS
1WS
2WS
PL0 (-40/85°C)
V
DD
>1.6 V
6
8
8
V
DD
>2.7 V
7.5
8
8
PL2 (-40/85°C)
V
DD
>1.6 V
14
28
32
V
DD
>2.7 V
24
32
32
Table 45-31. NVM Timing Characteristics
(1)
Symbol
Parameter
Max
Units
t
FPP
Page programming time
2.5
ms
t
FRE
Row erase time
6
Note:
1.
These values are based on simulation. They are not covered by production test limits or
characterization.
For this Flash technology, a maximum number of 8 consecutive writes is allowed per row. Once this
number is reached, a row erase is mandatory.
Table 45-32. Flash Endurance and Data Retention
Symbol
Parameter
Conditions
Min.
Typ.
Units
Ret
NVM25k
Retention after up to 25k
Average ambient 55°C
10
50
Years
Ret
NVM2.5k
Retention after up to 2.5k
Average ambient 55°C
20
100
Years
Ret
NVM100
Retention after up to 100
Average ambient 55°C
25
>100
Years
Cyc
NVM
Cycling Endurance
(1)
-40°C < Ta < 85°C
25K
100K
Cycles
Note:
1.
An endurance cycle is a write and an erase operation.
Table 45-33. EEPROM Emulation
(1)
Reliability Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Units
Ret
EE100k
Retention after up to 100k
Average ambient 55°C
10
50
Years
Ret
EE10k
Retention after up to 10k
Average ambient 55°C
20
100
Years
Cyc
EE
Cycling Endurance
(2)
-40°C < Ta < 85°C
100K
400K
Cycles
Note:
1.
The EEPROM emulation is a software emulation described in the App note AT03265.
2.
An endurance cycle is a write and an erase operation.
Atmel SAM L22G / L22J / L22N [DATASHEET]
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