Table 45-34. Flash Erase and Programming Current
Symbol
Parameter
Typ.
Units
IDD
NVM
Maximum current (peak)
during whole
programming or erase
operation
10
mA
45.12. Oscillators Characteristics
45.12.1. XOSC
45.12.1.1. Digital Clock Characteristics
The following table describes the characteristics for the oscillator when a digital clock is applied on Xin.
Table 45-35. Digital Clock Characteristics
Symbol
Parameter
Min.
Typ.
Max
Units
FXin
Xin clock frequency
-
-
24
MHz
DCXin(1)
Xin clock duty cycle
40
50
60
%
Note:
These values are based on simulation. They are not covered by production test limits or
characterization.
45.12.1.2. Crystal Oscillator Characteristics
The following table describes the characteristics for the oscillator when a crystal is connected between
XIN and XOUT .
Figure 45-2. Oscillator Connection
C
SHUNT
L
M
R
M
C
M
C
STRAY
C
LEXT
C
LEXT
Xin
Crystal
Xout
The user must choose a crystal oscillator where the crystal load capacitance C
L
is within the range given
in the table. The exact value of C
L
can be found in the crystal datasheet. The capacitance of the external
capacitors (C
LEXT
) can then be computed as follows:
C
LEXT
= 2 C
L
− C
STRAY
− C
SHUNT
where C
STRAY
is the capacitance of the pins and PCB, C
SHUNT
is the shunt capacitance of the crystal.
Atmel SAM L22G / L22J / L22N [DATASHEET]
Atmel-42402E-SAM L22G / L22J / L22N_Datasheet_Complete-07/2016
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