Program flash
0
To MCU's
flash controller
Interrupt
Control
registers
Status
registers
Register access
Memory controller
Figure 29-1. Flash Block Diagram
29.1.3 Glossary
Command write sequence — A series of MCU writes to the flash FCCOB register
group that initiates and controls the execution of flash algorithms that are built into the
flash memory module.
Endurance — The number of times that a flash memory location can be erased and
reprogrammed.
FCCOB (Flash Common Command Object) — A group of flash registers that are used
to pass command, address, data, and any associated parameters to the memory controller
in the flash memory module.
Flash block — A macro within the flash memory module which provides the nonvolatile
memory storage.
Flash Memory Module — All flash blocks plus a flash management unit providing
high-level control and an interface to MCU buses.
HSRUN — An MCU power mode enabling high-speed access to the memory resources
in the flash module. The user has no access to the flash command set when the MCU is in
HSRUN mode.
IFR — Nonvolatile information register found in each flash block, separate from the
main memory array.
Longword — 32 bits of data with an aligned longword having byte-address[1:0] = 00.
NVM — Nonvolatile memory. A memory technology that maintains stored data during
power-off. The flash array is an NVM using NOR-type flash memory technology.
Chapter 29 Flash Memory Module (FTFA)
K22F Sub-Family Reference Manual , Rev. 3, 7/2014
Freescale Semiconductor, Inc.
613
