CHAPTER 28 ELECTRICAL SPECIFICATIONS
User’s Manual U16896EJ2V0UD
675
Flash Memory Programming Characteristics
(T
A
=
−
40 to +85
°
C, V
DD
= EV
DD
= AV
REF0
=
2.7 to 5.5 V, V
SS
= EV
SS
= AV
SS
= 0 V)
(1) Basic
characteristics
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
V
DD
= 4.5 to 5.5 V
2
20
MHz
V
DD
= 4.0 to 5.5 V
2
16
MHz
Programming operation
frequency
f
CPU
V
DD
= 2.7 to 5.5 V
2
10
MHz
Supply voltage
V
DD
2.7 5.5 V
Number of rewrites
C
ERWR
Note
100 Times
Programming temperature
t
WHB
−
40 +85
°
C
Note
When writing initially to shipped products, it is also counted as one rewrite for “write only”.
Example (P: Write, E: Erase)
Shipped
product
→
P
→
E
→
P
→
E
→
P: 3 rewrites
Shipped
product
→
E
→
P
→
E
→
P
→
E
→
P: 3 rewrites
(2) Serial write operation characteristics
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Setup time from V
DD
↑
to FLMD0
↑
t
DP
<129>
10 ms
3 s
Time from RESET
↑
(after securing
oscillation stabilization time) to
FLMD0 pulse input start
t
RP
<130>
66611.2/f
X
s
FLMD0 pulse high-/low-level width
t
PW
<131>
10
100
μ
s
FLMD0 pulse rise time
t
R
<132>
50
ns
FLMD0 pulse fall time
t
F
<133>
50
ns
Remark
f
X
: Main clock oscillation frequency
Serial Write Operation Timing
V
DD
FLMD1
0 V
RESET (input)
FLMD0
<130>
<129>
<131>
<131>
<132> <133>
<R>
<R>
<R>