Toshiba TMPR4925, Руководство пользователя

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Chapter 22 Electrical Characteristics
22-3
22.3.2 DC Characteristics Except for PCI Interface
(Tc = 0 ~ 70
°
C, V
CCIO
= 3.3 V
±
0.3 V, V
CCInt
= 1.5 V
±
0.1 V, V
SS
= 0 V)
Parameter SYM Conditions Min. Max. Unit
Low-level input voltage V
ILPCI
(1) -0.5 0.9 V
High-level input voltage V
IHPCI
(1) 1.8 V
CCIO
+ 0.3 V
High-level output voltage V
OHPCI
(2) I
OUT
=
−
500
µ
A V
CCIO
×
0.9
⎯
V
Low-level output voltage V
OLPCI
(2) I
OUT
= 1500
µ
A
⎯
V
CCIO
×
0.1 V
Input leakage current I
IHPCI
I
ILPCI
(1) 0 < V
IN
< V
CCIO
-10
-10
10
10
µ
A
µ
A
(1): PCICLKIO, PCIAD[31:0], C_BE[3:0], PAR, FRAME * , IRDY * , TRDY * , STOP * , ID_SEL, DEVSEL * , REQ[3:0] * , GNT[3:0] * ,
PERR * , SERR
(2): All PCI interface except ID SEL.
22.4 Power Circuit for PLL
22.4.1 Recommended Circuit for PLL
Parameter Symbol AS a Reference Value Unit
Resistor R 5.6
Ω
Inductance L 2.2
µ
H
Capacitor C1
C2
C3
1
82
10
nF
nF
µ
F
VddInt / VddPLL 1.5
±
0.1 V
Note: Reference
Figure 22.4.1 Power Circuit for PLL
TX4925
Vss
VddInt
PLL1Vdd_A
PLL1Vss_A
R L
C1 C2 C3
L R
C1, C2, C3, R, and L should be placed as
closed to the processor as possible.