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GD32F10x User Manual
48
register, or only on bank1 by setting MER bit to 1 in the FMC_CTL1 register, or on entire flash
by setting MER bits to 1 in FMC_CTL0 register and FMC_CTL1 register. The following steps
show the mass erase register access sequence.
Unlock the FMC_CTLx registers if necessary.
Check the BUSY bit in FMC_STATx registers to confirm that no flash memory operation
is in progress (BUSY equals to 0). Otherwise, wait until the operation has finished.
Set MER bit in FMC_CTL0 register if erase bank0 only. Set MER bit in FMC_CTL1
register if erase bank1 only. Set MER bits in FMC_CTL0 register and FMC_CTL1 register
if erase entire flash.
Send the mass erase command to the FMC by setting the START bit in FMC_CTLx
registers.
Wait until all the operations have been finished by checking the value of the BUSY bit in
FMC_STATx registers.
Read and verify the flash memory if required using a DBUS access.
When the operation is executed successfully, the ENDF in FMC_STATx registers is set, and
an interrupt will be triggered by FMC if the ENDIE bit in the FMC_CTLx registers is set. Since
all flash data will be modified to a value of 0xFFFF_FFFF, the mass erase operation can be
implemented using a program that runs in SRAM or by using the debugging tool that accesses
the FMC registers directly.
For the GD32F10x_CL and GD32F10x_XD, the mass erase procedure applied to bank1 is
similar to the procedure applied to bank0.
The
Figure 2-2. Process of mass erase operation
indicates the mass erase operation flow.
Содержание GD32F10 Series
Страница 1: ...GigaDevice Semiconductor Inc GD32F10x Arm Cortex M3 32 bit MCU User Manual Revision 2 6 Jun 2022 ...
Страница 63: ...GD32F10x User Manual 63 programmed during the chip production ...
Страница 117: ...GD32F10x User Manual 117 010 1 0 011 0 9 ...
Страница 416: ...GD32F10x User Manual 416 shadow register updates every update event ...
Страница 427: ...GD32F10x User Manual 427 value ...
Страница 518: ...GD32F10x User Manual 518 These bits are not used in SPI mode ...