Atmel SAM4S Series, Preliminary Data Sheet

Page: 1137 / 1163

1137
11100B–ATARM–31-Jul-12
SAM4S Series [Preliminary]
42.11.8 Two-wire Serial Interface Characteristics
Table 50 describes the requirements for devices connected to the Two-wire Serial Bus. For timing symbols refer to Figure
42-29 .
Notes: 1. Required only for f
TWCK
> 100 kHz.
2. C
B
= capacitance of one bus line in pF. Per I2C Standard, C
b
Max = 400pF
3. The TWCK low Period is defined as follows:
4. The TWCK high period is defined as follows:
5. t
CP_MCK
= MCK Bus Period.
Table 42-49. Two-wire Serial Bus Requirements
Symbol Parameter Condition Min Max Units
V
IL
Input Low-voltage -0.3 0.3 V
VDDIO
V
V
IH
Input High-voltage 0.7xV
VDDIO
V
CC
+ 0.3 V
V
HYS
Hysteresis of Schmitt Trigger Inputs 0.150 – V
V
OL
Output Low-voltage 3 mA sink current - 0.4 V
t
R
Rise Time for both TWD and TWCK 20 + 0.1C
b
(1)(2)
300 ns
t
OF
Output Fall Time from V
IHmin
to V
ILmax
10 pF < C
b
< 400 pF
Figure 42-29
20 + 0.1C
b
(1)(2)
250 ns
C
i
(1)
Capacitance for each I/O Pin – 10 pF
f
TWCK
TWCK Clock Frequency 0 400 kHz
Rp Value of Pull-up resistor
f
TWCK
≤
100 kHz
Ω
f
TWCK
> 100 kHz
Ω
t
LOW
Low Period of the TWCK clock
f
TWCK
≤
100 kHz
(3)
– µs
f
TWCK
> 100 kHz
(3)
– µs
t
HIGH
High period of the TWCK clock
f
TWCK
≤
100 kHz
(4)
– µs
f
TWCK
> 100 kHz
(4)
– µs
t
HD;STA
Hold Time (repeated) START Condition
f
TWCK
≤
100 kHz t
HIGH
– µs
f
TWCK
> 100 kHz t
HIGH
– µs
t
SU;STA
Set-up time for a repeated START condition
f
TWCK
≤
100 kHz t
HIGH
– µs
f
TWCK
> 100 kHz t
HIGH
– µs
t
HD;DAT
Data hold time
f
TWCK
≤
100 kHz 0 3 x T
CP_MCK
(5)
µs
f
TWCK
> 100 kHz 0 3 x T
CP_MCK
(5)
µs
t
SU;DAT
Data setup time
f
TWCK
≤
100 kHz
t
LOW -
3 x
t
CP_MCK
(5)
– ns
f
TWCK
> 100 kHz
t
LOW -
3 x
t
CP_MCK
(5)
– ns
t
SU;STO
Setup time for STOP condition
f
TWCK
≤
100 kHz t
HIGH
– µs
f
TWCK
> 100 kHz t
HIGH
– µs
t
HD;STA
Hold Time (repeated) START Condition
f
TWCK
≤
100 kHz t
HIGH
– µs
f
TWCK
> 100 kHz t
HIGH
– µs
V
VDDIO
0,4V
–
3mA
--------------------------------------
1000ns
C
b
-------------------
V
VDDIO
0,4V –
3mA
--------------------------------------
300ns
C
b
----------------
T
low
CLDIV
(
2
CKDIV
× ( )
4
)
+ T
MCK
×
=
T
high
CHDIV
(
2
CKDIV
× ( )
4
)
+ T
MCK
×
=