824
CE
OE
CE
A18–A0
OE
WE
I/O7–I/O0
Note: Data is latched on the rising edge of
WE
.
t
ceh
t
wep
t
f
t
r
t
ces
t
nxtc
Address stable
t
ds
t
dh
Command write
Memory read mode
Figure 22-18 Timing Waveforms for Memory Read after Memory Write
Table 22-14 AC Characteristics in Transition from Memory Read Mode to Another Mode
(Conditions: V
CC
= 3.3 V ±0.3 V, V
SS
= 0 V, T
a
= 25°C ±5°C)
Item
Symbol
Min
Max
Unit
Command write cycle
t
nxtc
20
—
µs
CE
hold time
t
ceh
0
—
ns
CE
setup time
t
ces
0
—
ns
Data hold time
t
dh
50
—
ns
Data setup time
t
ds
50
—
ns
Write pulse width
t
wep
70
—
ns
WE
rise time
t
r
—
30
ns
WE
fall time
t
f
—
30
ns
Содержание H8S/2631
Страница 28: ...xviii Appendix G Package Dimensions 1154 ...
Страница 341: ...316 Transfer SAR or DAR DAR or SAR Block area First block Nth block Figure 9 8 Memory Mapping in Block Transfer Mode ...
Страница 918: ...905 ø DREQ0 DREQ1 tDRQS tDRQH Figure 25 19 DMAC DREQ Input Timing ...
Страница 955: ...943 A 2 Instruction Codes Table A 2 shows the instruction codes ...