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Section 22 ROM
22.1
Features
The H8S/2633 Series has 256 kbytes of on-chip flash memory. The features of the flash memory
are summarized below.
•
Four flash memory operating modes
Program mode
Erase mode
Program-verify mode
Erase-verify mode
•
Programming/erase methods
The flash memory is programmed 128 bytes at a time. Block erase (in single-block units) can
be performed. To erase the entire flash memory, each block must be erased in turn. Block
erasing can be performed as required on 4 kbytes, 32 kbytes, and 64 kbytes blocks.
•
Programming/erase times
The flash memory programming time is 10 ms (typ.) for simultaneous 128-byte programming,
equivalent to 78 µs (typ.) per byte, and the erase time is 100 ms (typ.).
•
Reprogramming capability
The flash memory can be reprogrammed up to 100 times.
•
On-board programming modes
There are two modes in which flash memory can be programmed/erased/verified on-board:
Boot mode
User program mode
•
Automatic bit rate adjustment
With data transfer in boot mode, the LSI’s bit rate can be automatically adjusted to match the
transfer bit rate of the host.
•
Flash memory emulation in RAM
Flash memory programming can be emulated in real time by overlapping a part of RAM onto
flash memory.
•
Protect modes
There are three protect modes, hardware, software, and error protection, which allow protected
status to be designated for flash memory program/erase/verify operations.
•
Programmer mode
Flash memory can be programmed/erased in programmer mode, using a PROM programmer,
as well as in on-board programming mode.
Содержание H8S/2631
Страница 28: ...xviii Appendix G Package Dimensions 1154 ...
Страница 341: ...316 Transfer SAR or DAR DAR or SAR Block area First block Nth block Figure 9 8 Memory Mapping in Block Transfer Mode ...
Страница 918: ...905 ø DREQ0 DREQ1 tDRQS tDRQH Figure 25 19 DMAC DREQ Input Timing ...
Страница 955: ...943 A 2 Instruction Codes Table A 2 shows the instruction codes ...