917
3. Time to erase one block. (Indicates the time during which the E1 bit is set in FLMCR1.
Does not include the erase-verify time.)
4. Maximum programming time
(tP(max) = Wait time after P1 bit setting (z)
×
maximum number of writes (N))
(z0 + z1)
×
6 + z2
×
994
5. Maximum erase time
(t
E
(max) = Wait time after E1 bit setting (z)
×
maximum number of erases (N))
25.7
Usage Note
Although both the F-ZTAT and mask ROM versions fully meet the electrical specifications listed
in this manual, due to differences in the fabrication process, the on-chip ROM, and the layout
patterns, there will be differences in the actual values of the electrical characteristics, the operating
margins, the noise margins, and other aspects.
Therefore, if a system is evaluated using the F-ZTAT version, a similar evaluation should also be
performed using the mask ROM version.
Содержание H8S/2631
Страница 28: ...xviii Appendix G Package Dimensions 1154 ...
Страница 341: ...316 Transfer SAR or DAR DAR or SAR Block area First block Nth block Figure 9 8 Memory Mapping in Block Transfer Mode ...
Страница 918: ...905 ø DREQ0 DREQ1 tDRQS tDRQH Figure 25 19 DMAC DREQ Input Timing ...
Страница 955: ...943 A 2 Instruction Codes Table A 2 shows the instruction codes ...