Section 13: LPT library function reference
Model 4200A-SCS Parameter Analyzer Reference Manual
13-80
4200A-901-01 Rev. C / February 2017
mpulse
This command uses a source-measure unit (SMU) to force a voltage pulse and measure both the voltage and
current for exact device loading.
Usage
int mpulse(long
instr_id
, double
pulse_amplitude
, double
pulse_duration
, double
*
v_meas
, double *
i_meas
);
instr_id
The instrument identification code of the instrument under control
pulse_amplitude
The pulse height in volts
pulse_duration
The pulse width in seconds; the measurements are made at the end of the pulse
before the
mpulse
command is shut down
v_meas
The variable used to receive the voltage on the output of the instrument at the time
the pulse terminates
i_meas
The variable used to receive the current drawn from the instrument; this
measurement is made simultaneously with the voltage, so the combined values are
an exact representation of the device load at pulse termination
Details
Voltage and current are measured just before the pulse terminates. Pulsing is useful for devices that
exhibit self-heating, which could damage the device or shift operating characteristics. Examples are
high-power GaAs transistors or BJTs, but even some silicon devices exhibit self-heating.
Example
double vdsat, idsat, vds;
.
.
mpulse(SMU1, vds, l.0E-3, &vdsat, &idsat);
/* Pulse output of SMU1. */
This example measures the drain current of a metal-oxide semiconductor field-effect transistor (MOSFET)
when drain-source voltage (V
DS
) equals gate-source voltage (V
GS
). A voltage pulse, V
DS
, is applied to the
drain. The pulse duration is 1 ms. Voltage across the MOS transistor, V
DSAT
, and drain current, I
DSAT
, are
measured.
Also see
None
