Appendix L: Wafer-level reliability testing
Model 4200A-SCS Parameter Analyzer Reference Manual
L-12
4200A-901-01 Rev. C / February 2017
I_crit
At least 10 times the test system current measurement noise floor; this oxide
current (A) is the minimum value used in determining the change of slope
breakdown criteria (Ref. JESD35-A)
I_box
An optional measured current level for which a stress voltage is recorded; this value
provides an additional point on the current-voltage curve; a typical value is 1 µA
(Ref. JESD35-A)
I_max
Oxide breakdown criteria;
I_bd
is obtained from I-V curves and is the oxide current
at the step just prior to breakdown (Ref. JESD35-A)
exit_curr_mult
Change of current failure criteria; this is the ratio of measured
current over previous current level, which, if exceeded, will result in failure (2.5 to 5,
recommended value: 10 to 100)
exit_slope_mult
Change of slope failure criteria; this is the factor of change in FN slope, which, if
exceeded, will result in failure (2.5 to 5, recommended value: 3)
q_max
Maximum accumulated oxide charge per oxide area; used to terminate a test where
breakdown occurs but was not detected during the test (C/cm
2
) (Ref. JESD35-A)
t_max
Maximum stress time allowed in seconds; reaching this limit will result in test to
finish (s)
v_max
The maximum voltage limit for the voltage ramp; this limit is specified at 30 MV/cm
for oxides less than 20 nm thick and 15 MV/cm for thicker oxides; refer to
Details
area
Area of oxide structure (cm
2
)
exit_mode
Failure criteria mode; refer to
Details
V_size
Size of data array; maximum 65535
I_size
Size of data array; maximum 65535
T_size
Size of data array; maximum 65535
q_size
Size of data array; maximum 65535
