Model 4200A-SCS Parameter Analyzer Reference Manual
Appendix D: Using a Model 82 C-V System
4200A-901-01 Rev. C / February 2017
D-61
G/nI computation
Where:
•
G = generation rate (s
-1
)
•
ε
S
= permittivity of semiconductor (F/cm)
•
A = gate area (cm
2
)
•
N
AVG
= average doping concentration (cm
-3
)
•
C
OX
= oxide (maximum) capacitance (pF)
•
C
t(i+1)
= (i+1) value of measured C-t capacitance (pF)
•
C
t(i-1)
= (i-1) value of measured C-t capacitance (pF)
•
n
I
= intrinsic carrier concentration (cm
-3
)
•
t
int
= time interval between C-t measurements (s)
•
i = [2, #Rdgs-1]
w - wF computation
Where:
•
w = depletion depth (cm)
•
w
F
= equilibrium inversion depth (cm)
•
ε
S
= permittivity of semiconductor (F/cm)
•
A = gate area (cm
2
)
•
C
ti
= i(th) value of measured C-t capacitance (pF)
•
C
MIN
= equilibrium minimum capacitance (pF)
Determining generation velocity and generation lifetime
The generation lifetime,
τ
G
is equal to the reciprocal of the slope of the linear portion of the Zerbst
plot, while the generation velocity, s, is the y-axis (G/n
I
) intercept of the same linear section of the
Zerbst plot.
