Model 4200A-SCS Parameter Analyzer Reference Manual
Section 4: Multi-frequency capacitance-voltage unit
4200A-901-01 Rev. C / February 2017
4-55
moscap-c-2vsv test
This test performs a C-V sweep and displays the inverse squared capacitance (1/C
2
) as a function of
the gate voltage (V
G
). This sweep can yield important information about doping profile because the
substrate doping concentration (N
SUB
) is inversely related to the reciprocal of the slope of the 1/C
2
versus V
G
curve. A positive slope indicates acceptors and a negative slope indicates donors. The
substrate doping concentration is extracted from the slope of the 1/C
2
curve and is displayed on the
graph. The doping concentration is the result of the NSUB Formulator calculation.
In the following equation,
N
(NDOPING) is related to the reciprocal of the slope of the 1/C
2
versus V
G
curve.
Where:
•
N(W) = doping concentration (cm
-3
)
•
A = gate area (cm
2
)
•
C = measured capacitance (F)
•
ε
s
= permittivity of the substrate material (F/cm)
•
q = electron charge (1.60219 x 10
-19
C)
•
V = gate voltage (V)
moscap-c-2vsv Analyze sheet
The test data is displayed in the Analyze sheet:
•
Cp_GB: Measured parallel capacitance.
•
Gp_GB: Measured conductance.
•
DCV_GB: Forced DC bias voltage.
•
F_GB: Forced test frequency.
•
Formulas: Formulator calculation results.
GB = gate-to-bulk.
