Section 4: Multi-frequency capacitance-voltage unit
Model 4200A-SCS Parameter Analyzer Reference Manual
4-70
4200A-901-01 Rev. C / February 2017
gni-w-wf Analyze sheet
Test data is displayed in the Analyze sheet:
•
Time: Timestamp for each measurement.
•
Cp_GB: Measured parallel capacitance.
•
Gp_GB: Measured conductance.
•
DCV_GB: Forced DC bias voltage.
•
F_GB: Forced test frequency.
•
CVU1S: Status code for each measurement. Rows highlighted in blue indicate a fault. For details,
see
(on page 6-191).
•
Formulas: Formulator calculation results.
GB = gate-to-bulk.
MOSFET I-V and C-V Tests Using 4200A-CVIV Multi-Switch Project
(mosfet-cviv)
This project demonstrates how you can use a 4200A-CVIV Multi-Switch to automate I-V and C-V
testing of a MOSFET. When the project is run, the 4200A-CVIV connects four SMUs to the MOSFET.
The SMUs perform I-V tests on the MOSFET. The 4200A-CVIV then connects the CVU to the
MOSFET. The CVU measures the gate to drain/source/bulk capacitance as a function of the DC
voltage.
Capacitor Measurements (cap-measurements)
This project performs a capacitance-voltage (C-V) sweep and a capacitance-frequency (C-f) sweep
on a metal-insulator-metal (MIM) capacitor (10 pF). The following graphs are generated:
•
C versus V: Using a voltage sweep, capacitance is measured at every step of the sweep to
generate a capacitance versus voltage graph. Noise is also calculated.
•
C versus F: Using a frequency sweep, capacitance is measured at every frequency point to
generate a capacitance versus frequency graph.
