Model 4200A-SCS Parameter Analyzer Reference Manual
Section 4: Multi-frequency capacitance-voltage unit
4200A-901-01 Rev. C / February 2017
4-85
Formula: TOXNM
Formula name: TOXNM (
TOX
)
Units: nm
Description: Calculated thickness of oxide.
Formulator entry:
TOXNM = (1E7*AREA*EOX)/COX_CALC
Simplified equation:
Where:
•
T
OX
= oxide thickness (nm)
•
A = gate area (cm
2
)
•
ε
OX
= permittivity of the oxide material (F/cm)
•
C
OX
= oxide capacitance (F)
•
1 x E
7
= units conversion from cm to nm
Formula: VFB
Formula name: VFB (
VFB
)
Units: V
Description: Flatband voltage. Once CFB (
CFB
) is derived,
VFB
is interpolated from the closest
VGS
values.
Formulator entry:
VFB = AT(DCV_GB,POSVFB)
Constants for the mosfet project
Constant
Default Value
Units
Description
AREA
0.00012
cm
2
Gate area of device
DOPETYPE
1
none
1 = P-type, -1 = N-type
EOX
3.4e-013
F/cm
ε
OX
- Permittivity of oxide
ES
1.04e-12
F/cm
ε
S
- Semiconductor permittivity
Q
1.60218e-019
C
Charge on an electron
TEMP
293
K
Test temperature