Model 4200A-SCS Parameter Analyzer Reference Manual
Appendix D: Using a Model 82 C-V System
4200A-901-01 Rev. C / February 2017
D-67
Interface States / Doping Profiles
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IEEE Trans.
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, 13, 701 (1966).
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Characterization of Surface States at the Si-SO2 Interface, Nondestructive Evaluation
of Semiconductor Materials and Devices (J.N. Zemel, ed.)
, Plenum Press, New York, p. 105 (1979).
Brews, J.R., "Correcting Interface-State Errors in MOS Doping Profile Determinations,"
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44, 3228 (1973).
Gordon, B.J., "On-Line Capacitance-Voltage Doping Profile Measurement of Low-Dose Ion Implants,"
IEEE Trans. Dev.
, ED-27, 12 (1980).
VanGelder, W., and Nicollian, E.H., "Silicon Impurity Distribution as Revealed by Pulsed MOS C-V
Measurements,"
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, 118, 1 (1971).
MOS Process Characterization
Zaihinger, K.H. and Heiman, F.P., "The C-V Technique as an Analytical Tool",
Solid State
Technology
, 13:5-6 (1970).
McMillian, L., "MOS C-V Techniques for IC Process Control,"
Solid State Technology
, 15, 47 (1972).
Zerbst, M., Relaxationseffekte an Halbeiter Isolator-Grenzflaechen, Z.Angnew, Phys. 22, 30 (1966).
Mobile Ion Charge Monitoring
Stauffer, L., et al., "Mobile Ion Monitoring by Simultaneous Triangular Voltage Sweep,"
Solid State
Technology
, 38, S3 (1995).
