Section 24 ROM
Rev. 3.00 Jan 25, 2006 page 739 of 872
REJ09B0286-0300
This LSI
On-chip ROM area
MCU mode
H'000000
Programmer mode
H'00000
H'03FFFF
H'3FFFF
Figure 24.11 Memory Map in Programmer Mode
24.12 Usage Notes
The following lists notes on the use of on-board programming modes and programmer mode.
1. Perform programming/erasing with the specified voltage and timing.
If a voltage higher than the rated voltage is applied, the product may be fatally damaged. Use a
PROM programmer that supports the Renesas 256-kbyte flash memory on-chip MCU device at
3.3 V. Do not set the programmer to HN28F101 or the programming voltage to 5.0 V. Use
only the specified socket adapter. If other adapters are used, the product may be damaged.
2. Notes on power on/off
At powering on or off the Vcc power supply, fix the
RES
pin to low and set the flash memory
to hardware protection state. This power on/off timing must also be satisfied at a power-off and
power-on caused by a power failure and other factors.
3. Perform flash memory programming/erasing in accordance with the recommended algorithm
In the recommended algorithm, flash memory programming/erasing can be performed without
subjecting this LSI to voltage stress or sacrificing program data reliability. When setting the P
or E bit in FLMCR1 to 1, set the watchdog timer against program runaway.
4. Do not set/clear the SWE bit during program execution in the flash memory.
Do not set/clear the SWE bit during program execution in the flash memory. An interval of at
least 100
µ
s is necessary between program execution or data reading in flash memory and
SWE bit clearing. When the SWE bit is set to 1, flash memory data can be modified, however,
flash memory data can be read only in program-verify or erase-verify mode. Do not access the
flash memory for a purpose other than verification during programming/erasing. Do not clear
the SWE bit during programming, erasing, or verifying.
5. Do not use interrupts during flash memory programming/erasing
In order to give the highest priority to programming/erasing operation, disable all interrupts
including NMI input when the flash memory is programmed or erased.
Summary of Contents for H8S/2158
Page 10: ...Rev 3 00 Jan 25 2006 page viii of lii...
Page 36: ...Rev 3 00 Jan 25 2006 page xxxiv of lii B Product Lineup 863 C Package Dimensions 864 Index 865...
Page 47: ...Rev 3 00 Jan 25 2006 page xlv of lii Appendix Figure C 1 Package Dimensions TBP 112A 864...
Page 54: ...Rev 3 00 Jan 25 2006 page lii of lii...
Page 70: ...Section 1 Overview Rev 3 00 Jan 25 2006 page 16 of 872 REJ09B0286 0300...
Page 118: ...Section 3 MCU Operating Modes Rev 3 00 Jan 25 2006 page 64 of 872 REJ09B0286 0300...
Page 126: ...Section 4 Exception Handling Rev 3 00 Jan 25 2006 page 72 of 872 REJ09B0286 0300...
Page 198: ...Section 6 Bus Controller Rev 3 00 Jan 25 2006 page 144 of 872 REJ09B0286 0300...
Page 326: ...Section 10 8 Bit PWM Timer PWM Rev 3 00 Jan 25 2006 page 272 of 872 REJ09B0286 0300...
Page 440: ...Section 15 Watchdog Timer WDT Rev 3 00 Jan 25 2006 page 386 of 872 REJ09B0286 0300...
Page 606: ...Section 17 I 2 C Bus Interface IIC Rev 3 00 Jan 25 2006 page 552 of 872 REJ09B0286 0300...
Page 742: ...Section 19 Multimedia Card Interface MCIF Rev 3 00 Jan 25 2006 page 688 of 872 REJ09B0286 0300...
Page 750: ...Section 21 D A Converter Rev 3 00 Jan 25 2006 page 696 of 872 REJ09B0286 0300...
Page 768: ...Section 22 A D Converter Rev 3 00 Jan 25 2006 page 714 of 872 REJ09B0286 0300...
Page 770: ...Section 23 RAM Rev 3 00 Jan 25 2006 page 716 of 872 REJ09B0286 0300...
Page 824: ...Section 26 Clock Pulse Generator Rev 3 00 Jan 25 2006 page 770 of 872 REJ09B0286 0300...
Page 844: ...Section 27 Power Down Modes Rev 3 00 Jan 25 2006 page 790 of 872 REJ09B0286 0300...
Page 878: ...Section 28 List of Registers Rev 3 00 Jan 25 2006 page 824 of 872 REJ09B0286 0300...
Page 926: ...Index Rev 3 00 Jan 25 2006 page 872 of 872 REJ09B0286 0300...