Renesas F-ZTAT H8 Series, Hardware Manual

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15. Electrical Characteristics (H8/3857 Group)
Rev.3.00 Jul. 19, 2007 page 418 of 532
REJ09B0397-0300
15.2.6 Flash Memory Characteristics
Table 15.10 shows the flash memory characteristics.
Table 15.10 Flash Memory Characteristics
Conditions: V
CC
= 4.5 V to 5.5 V, AV
CC
= 4.5 V to 5.5 V, V
SS
= AV
SS
= 0.0 V, T
a
= 0°C to +75°C
(program/erase operating temperature range)
Item
Symbol
Min
Typ
Max
Unit Test
Conditions
Programming time
*
1
*
2
*
4
t
P
⎯
10 200 ms/32 bytes
Erase time
*
1
*
3
*
5
t
E
⎯
100 300 ms/block
Rewrite times N
WEC
⎯ ⎯
100 Times
Programming Wait time after SWE bit setting *
1
x 10
⎯ ⎯ μ
s
Wait time after PSU bit setting *
1
y 50
⎯ ⎯ μ
s
Wait time after P bit setting
*
1
*
4
z
⎯ ⎯
200
μ
s
Wait time after P bit clearing *
1
α
10
⎯ ⎯ μ
s
Wait time after PSU bit clearing *
1
β
10
⎯ ⎯ μ
s
Wait time after PV bit setting *
1
γ
4
⎯ ⎯ μ
s
Wait time after H'FF dummy write
*
1
ε
2
⎯ ⎯ μ
s
Wait time after PV bit clearing *
1
η
4
⎯ ⎯ μ
s
Maximum number of writes *
1
*
4
N
⎯ ⎯
1000 Times
Erasing Wait time after SWE bit setting *
1
x 10
⎯ ⎯ μ
s
Wait time after ESU bit setting
*
1
y 200
⎯ ⎯ μ
s
Wait time after E bit setting *
1
*
5
z
⎯ ⎯
5 ms
Wait time after E bit clearing *
1
α
10
⎯ ⎯ μ
s
Wait time after ESU bit clearing *
1
β
10
⎯ ⎯ μ
s
Wait time after EV bit setting
*
1
γ
20
⎯ ⎯ μ
s
Wait time after H'FF dummy write *
1
ε
2
⎯ ⎯ μ
s
Wait time after EV bit clearing *
1
η
5
⎯ ⎯ μ
s
Maximum number of erases *
1
*
5
N
⎯ ⎯
60 Times
Notes: 1. Follow the program/erase algorithms when making the time settings.
2. Programming time per 32 bytes. (Indicates the total time during which the P bit is set in
flash memory control register 1 (FLMCR1). Does not include the program-verify time.)
3. Time to erase one block. (Indicates the time during which the E bit is set in FLMCR1.
Does not include the erase-verify time.)
4. Maximum programming time
(t
P
(max) = Wait time after P bit setting (z)
×
maximum number of writes (N))
5. Maximum erase time
(t
E
(max) = Wait time after E bit setting (z)
×
maximum number of erases (N))