6. ROM
Rev.3.00 Jul. 19, 2007 page 163 of 532
REJ09B0397-0300
6.8.9
Writer Mode Transition Time
Commands cannot be accepted during the oscillation stabilization period or the Writer mode setup
period. A transition is made to memory read mode after the Writer mode setup time.
Table 6.20 Stipulated Transition Times to Command Wait State
Item
Symbol Min Max Unit Notes
Standby release (oscillation stabilization time)
t
osc1
40
⎯
ms
Writer mode setup time
t
bmv
10
⎯
ms
V
CC
hold time
t
dwn
0
⎯
ms
V
CC
RES
FWE
Memory read
mode
command
wait state
Command acceptance
Command
wait state
Normal/abnor-
mal end
determination
Auto-program mode
Auto-erase mode
t
osc1
t
bmv
t
dwn
Note: When not in auto-program mode or auto-erase mode, the FWE input pin should be driven low.
Don't care
Don't care
Figure 6.24 Oscillation Stabilization Time, Writer Mode Setup, and Power-Down Sequence
6.8.10
Notes on Memory Programming
1. When programming addresses which have previously been programmed, carry out auto-
erasing before auto-programming.
2. When performing programming using a PROM programmer on a chip that has been
programmed/erased in an on-board programming mode, auto-erasing is recommended before
carrying out auto-programming.
Notes: 1. The memory is initially in the erased state when the device is shipped by Renesas. For
other chips for which the erasure history is unknown, it is recommended that auto-
erasing be executed to check and supplement the initialization (erase) level.
2. Auto-programming should be performed once only on a particular address block.
Summary of Contents for F-ZTAT H8 Series
Page 6: ...Rev 3 00 Jul 19 2007 page iv of xxiv REJ09B0397 0300...
Page 194: ...7 RAM Rev 3 00 Jul 19 2007 page 168 of 532 REJ09B0397 0300...
Page 234: ...8 I O Ports Rev 3 00 Jul 19 2007 page 208 of 532 REJ09B0397 0300...
Page 274: ...9 Timers Rev 3 00 Jul 19 2007 page 248 of 532 REJ09B0397 0300...
Page 352: ...12 A D Converter Rev 3 00 Jul 19 2007 page 326 of 532 REJ09B0397 0300...
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