6. ROM
Rev.3.00 Jul. 19, 2007 page 139 of 532
REJ09B0397-0300
Figure 6.11 shows the execution procedure when the programming/erase control program is
transferred to on-chip RAM.
Release FWE
*
FWE = high
*
Branch to application program
in flash memory
Branch to programming/erase
control program in RAM area
Execute programming/erase control
program in RAM (flash memory rewriting)
Transfer programming/erase
control program to RAM
TEST2 = 1, TEST = 0
Reset start
Write FWE assessment program and transfer
program (and programming/erase control
program if necessary) beforehand
Do not apply a constant high level to the FWE pin. A high level should be applied to the
FWE pin only when programming or erasing flash memory. Also, while a high level is
applied to the FWE pin, the watchdog timer should be activated to prevent overprogramming
or overerasing due to program runaway, etc.
*
For further information on FWE application and disconnection, see section 6.9, Flash
Memory Programming and Erasing Precautions.
Notes:
Figure 6.11 User Program Mode Execution Procedure
Summary of Contents for F-ZTAT H8 Series
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