Chapter 30 Flash Memory
MPC5606BK Microcontroller Reference Manual, Rev. 2
Freescale Semiconductor
857
30.6
Programming considerations
In the following sections, register names can refer to the CFlash or DFlash versions of those registers.
Thus, for example, the term MCR can refer to the CFLASH_MCR or DFLASH_MCR, based on context.
30.6.1
Modify operation
All modify operations of the flash memory module are managed through the flash memory user registers
interface.
All the sectors of the flash memory module belong to the same partition (Bank), therefore when a Modify
operation is active on some sectors no read access is possible on any other sector (Read-While-Write is not
supported).
During a flash memory modify operation any attempt to read any flash memory location will output invalid
data and bit MCR[RWE] will be automatically set. This means that the flash memory module is not
fetchable when a modify operation is active and these commands must be executed from another memory
(internal SRAM or another flash memory module).
Address offset: 0x00058
Reset value: 0x0000_0000
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
R
MS[159:144]
W
Reset
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
R
MS[143:128]
W
Reset
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Figure 30-40. DFlash User Multiple Input Signature Register 4 (DFLASH_UMISR4)
Table 30-56. DFLASH_UMISR4 field descriptions
Field
Description
MS[159:128]
Multiple Input Signature, bits 159-128
These bits represent the MISR value obtained accumulating:
• The 8 ECC bits for the even double word (on MS[135:128]);
• The single ECC error detection for even double word (on MS138);
• The double ECC error detection for even double word (on MS139);
• The 8 ECC bits for the odd double word (on MS[151:144]);
• The single ECC error detection for odd double word (on MS154);
• The double ECC error detection for odd double word (on MS155).
The MS can be seeded to any value by writing the DFLASH_UMISR4 register.
Summary of Contents for MPC5605BK
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