Renesas H8S/2100 Series, Hardware Manual

Page: 1006 / 1024

Section 28 Electrical Characteristics
Rev. 1.00 Apr. 28, 2008 Page 980 of 994
REJ09B0452-0100
28.5 Flash Memory Characteristics
Table 28.13 lists the flash memory characteristics.
Table 28.13 Flash Memory Characteristics
Conditions: V
CC
= 3.0 V to 3.6 V, AV
CC
= 3.0 V to 3.6 V, Avref = 3.0 V to AV
CC
,
V
SS
= AV
SS
= 0 V
Ta = 0
°
C to +75
°
C (operating temperature range for programming/erasing)
Item Symbol Min. Typ. Max. Unit Test Conditions
Programming time
*
1
*
2
*
4
t
P

1 10 ms/128 bytes

40 130 ms/4-Kbyte
block

300 800 ms/32-Kbyte
block
Erase time *
1
*
2
*
4
t
E

600 1500 ms/64-Kbyte
block
Programming time (total) *
1
*
2
*
4
Σ
tP

1.4 4 s/160 Kbytes Ta = 25
°
C
Erase time (total)
*
1
*
2
*
4
Σ
tE

1.4 4 s/160 Kbytes Ta = 25
°
C
Programming and Erase time
(total)
*
1
*
2
*
4
Σ
tPE

2.9 8 s/160 Kbytes Ta = 25
°
C
Reprogramming count N
WEC
100
* 3
1000

Times
Data retention time
*
4
t
DRP
10
 
Years
Notes: 1. Programming and erase time depends on the data.
2. Programming and erase time do not include data transfer time.
3 This value indicates the minimum number of which the flash memory are
reprogrammed with all characteristics guaranteed. (The guaranteed value ranges
from 1 to the minimum number.)
4. This value indicates the characteristics while the flash memory is reprogrammed within
the specified range (including the minimum number).