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Appendix E GDU Electrical Specifications
MC9S12ZVM Family Reference Manual Rev. 1.3
774
Freescale Semiconductor
24a
P HGx to HSx, LGx to LSx RDSon (driver off state)
(11)
pmos
part, -40
°
C < T
j
< 150
°
C
R
gduoffp
—
16
22
Ω
24b
M HGx to HSx, LGx to LSx RDSon (driver off state)
pmos part, 150
°
C < T
j
< 175
°
C
R
gduoffp
—
20
26
Ω
25
M VSUP boost turn on trip point
V
BSTON
9.5
10.1
10.6
V
26
M VSUP boost turn off trip point
V
BSTOFF
9.75
10.3
10.8
V
27a
P Boost coil current limit (GDUBCL=0x0), -40
°
C < T
j
< 150
°
C
I
COIL0
80
190
350
mA
27b
M Boost coil current limit (GDUBCL=0x0), 150
°
C < T
j
< 175
°
C
I
COIL0
70
160
250
mA
28a
P Boost coil current limit (GDUBCL=0x8), -40
°
C < T
j
< 150
°
C
I
COIL8
230
380
640
mA
28b
M Boost coil current limit (GDUBCL=0x8), 150
°
C < T
j
< 175
°
C
I
COIL8
210
330
450
mA
29a
P Boost coil current limit (GDUBCL=0xF), -40
°
C < T
j
< 150
°
C
I
COIL15
370
530
870
mA
29b
M Boost coil current limit (GDUBCL=0xF), 150
°
C < T
j
< 175
°
C
I
COIL15
350
485
620
mA
30
M Phase signal division ratio 3V < V
HSx
< 20V
A
HSDIV
5.7
6
6.3
—
31
M HD signal division ratio 6V < V
HD
< 20V
A
HDDIV
4.9
5
5.1
—
32a
P CP driver RDSon highside
(12)
, -40
°
C < T
j
< 150
°
C
R
CPHS
—
44
90
Ω
32b
M CP driver RDSon highside
°
C < T
j
< 175
°
C
R
CPHS
—
71
100
Ω
33a
P CP driver RDSon lowside
, -40
°
C < T
j
< 150
°
C
R
CPLS
—
11.5
30
Ω
33b
M CP driver RDSon lowside
, 150
°
C < T
j
< 175
°
C
R
CPLS
—
20
35
Ω
34
M Current Sense Amplifier input voltage range
(AMPP/AMPM)
V
CSAin
0
—
VDDA -
1.2
V
35
M Current Sense Amplifier output voltage range
V
CSAout
0
—
VDDA
V
36
D Current Sense Amplifier open loop gain
AV
CSA
—
100000
—
—
37
C Current Sense Amplifier common mode rejection ratio
CMRR
CSA
—
400
—
—
38
M Current Sense Amplifier input offset
V
CSAoff
-15
—
15
mV
39
C Max effective Current Sense Amplifier output resistance
[0.1V .. VDDA - 0.2V]
R
CSAout
—
—
2
Ω
40
C Min Current Sense Amplifier output current
[0.1V .. VDDA - 0.2V]
(13)
I
CSAout
-750
—
750
µΑ
41
D Current Sense Amplifier large signal settling time
t
cslsst
—
2.9
—
µ
s
42
C Over Current Comparator filter time constant
(14)
τ
OCC
3
5
10
µ
s
43
C Over Current Comparator threshold tolerance
V
OCCtt
-75
—
75
mV
44
D HD input current when GDU is enabled
I
HD
—
130
µ
+
V
HD
/63K
—
A
45
D VLS regulator minimum RDSon (VSUP >= 6V)
R
VLSmin
—
—
40
Ω
46
C VCP to VBSx switch resistance
R
VCPVBS
—
600
1000
Ω
1. Without using the boost option. The minimum level can be relaxed when the boost option is used. The lower limit is sensed on
VLS, the upper limit is sensed on HD.
2. Without using the boost option. The minimum level can be relaxed when the boost option is used. The lower limit is sensed on
VLS, the upper limit is sensed on HD. Operation beyond 20V is limited to 1 hour over lifetime of the device
3. For high side, the performance of external diodes may influence this parameter.
4. If VSUP is lower than 11.2V, external FET gate drive will diminish and roughly follow VSUP - 2* Vbe
5. Total gate charge spec is only a recommendation. FETs with higher gate charge can be used when resulting slew rates are
tolerable by the application and resulting power dissipation does not lead to thermal overload.
Table E-1. GDU Electrical Characteristics (Junction Temperature From –40
°
C To +175
°
C)
4.85V<=VDDX,VDDA<=5.15V