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Appendix C ADC Electrical Specifications
MC9S12ZVM Family Reference Manual Rev. 1.2
Freescale Semiconductor
765
Figure C-1.
Table C-2. ADC Electrical Characteristics (Junction Temperature From –40
°
C To +175
°
C)
Supply voltage 3.13 V < V
DDA
< 5.5 V
Num
C
Rating
Symbol
Min
Typ
Max
Unit
1
C Max input source resistance
R
S
—
—
1
K
Ω
2
D Total input capacitance Non sampling
Total input capacitance Sampling
C
INN
C
INS
—
—
—
—
10
16
pF
3a
D Input internal Resistance
Junction temperature from –40
o
C to +150
o
C
R
INA
—
5
9.9
k
Ω
3b
D Input internal Resistance
Junction temperature from 150
o
C to +175
o
C
R
INA
—
—
12
k
Ω
4
T Disruptive analog input current
I
NA
-2.5
—
2.5
mA
5
T Coupling ratio positive current injection
K
p
—
—
1E-4
A/A
6
T Coupling ratio negative current injection
K
n
—
—
5E-3
A/A
PAD00-
PAD08
VDDA
VSSA
T
jmax
=150
o
C
I
leakp
< 1
µ
A
I
leakn
< 1
µ
A
C
bottom
3.7pF < S/H Cap < 6.2pF
(incl parasitics)
920
Ω
< R
INA
< 12K
Ω
(incl parasitics)
direct sampling time is 2 to 22 adc clock cycles of
0.25MHz to 8.34MHz -> 88
µ
s >= tsample >= 240ns
Switch resistance depends on input voltage, corner ranges are shown.
Leakage current is guaranteed by specification.
connected to low ohmic
supply during sampling
C
top
+
-
sampling via buffer amp 2 adc clock cycles
Cstray < 1.8pF