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Chapter 19 128 KB Flash Module (S12ZFTMRZ128K512V2)
MC9S12ZVM Family Reference Manual Rev. 1.3
732
Freescale Semiconductor
CAUTION
Field margin levels must only be used during verify of the initial factory
programming.
NOTE
Field margin levels can be used to check that Flash memory contents have
adequate margin for data retention at the normal level setting. If unexpected
results are encountered when checking Flash memory contents at field
margin levels, the Flash memory contents should be erased and
reprogrammed.
19.4.7.14 Erase Verify EEPROM Section Command
The Erase Verify EEPROM Section command will verify that a section of code in the EEPROM is erased.
The Erase Verify EEPROM Section command defines the starting point of the data to be verified and the
number of words.
Upon clearing CCIF to launch the Erase Verify EEPROM Section command, the Memory Controller will
verify the selected section of EEPROM memory is erased. The CCIF flag will set after the Erase Verify
EEPROM Section operation has completed. If the section is not erased, it means blank check failed, both
MGSTAT bits will be set.
Table 19-61. Set Field Margin Level Command Error Handling
Register
Error Bit
Error Condition
FSTAT
ACCERR
Set if CCOBIX[2:0] != 010 at command launch
Set if command not available in current mode (see
)
Set if an invalid global address [23:0] is supplied see
Set if an invalid margin level setting is supplied
FPVIOL
None
MGSTAT1
None
MGSTAT0
None
Table 19-62. Erase Verify EEPROM Section Command FCCOB Requirements
Register
FCCOB Parameters
FCCOB0
0x10
Global address [23:16] to
identify the EEPROM
block
FCCOB1
Global address [15:0] of the first word to be verified
FCCOB2
Number of words to be verified