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Appendix E GDU Electrical Specifications
MC9S12ZVM Family Reference Manual Rev. 1.3
Freescale Semiconductor
773
Appendix E
GDU Electrical Specifications
Table E-1. GDU Electrical Characteristics (Junction Temperature From –40
°
C To +175
°
C)
4.85V<=VDDX,VDDA<=5.15V
Num
C
Characteristic
Symbol
Min
Typ
Max
Unit
1
D VSUP Supply range
V
VSUP
-0.3
—
40
V
2a
M VSUP, HD Supply range FETs can be turned on
(1)
(normal range)
V
VSUP
/V
HD
7
14
20
V
2b
M VSUP, HD Supply range FETs can be turned on
(2)
(extended range)
V
VSUP
/V
HD
7
14
26
V
3
D
External FET Vgs drive with boost
(3)
(7V < Vsup < 20V)
V
VGS
9
9.6
12
V
4
D
External FET Vgs drive without boost
(4)
V
VGS
5
9.6
12
V
5
D External FET total gate charge @ 10V
(5)
CG
—
75
—
nC
6
C Highside desaturation threshold (8 steps of 0.15V)
V
desaths
HD - 1.4
—
HD - 0.35
V
7
C Lowside desaturation threshold (8 steps of 0.15V)
V
desatls
0.35
—
1.4
V
8
M Pull resistance between HGx and HSx
R
HSpul
60
80
120
ΚΩ
9
M Pull resistance between LGx and LSx
R
LSpul
60
80
120
ΚΩ
10a
P VLS output voltage for Vsup >=12.5V, Iout=30mA
-40
°
C < T
j
< 150
°
C
V
VLS_OUT
10.5
11
11.5
V
10b
M VLS output voltage for Vsup >=12.5V, Iout=30mA
150
°
C < T
j
< 175
°
C
V
VLS_OUT
10.0
10.6
11.5
V
11
M VLS current limit threshold
I
LIMVLS
60
77
100
mA
12a
M VLS low voltage monitor trippoint assert
V
LVLSA
6.2
6.5
7
V
12b
M VLS low voltage monitor trippoint deassert
V
LVLSD
6.2
6.58
7
V
13a
M HD high voltage monitor assert trippoint low
V
HVHDLA
20
21
22
V
13b
M HD high voltage monitor deassert trippoint low
V
HVHDLD
19.5
20.5
21.6
V
14a
M HD high voltage monitor assert trippoint high
V
HVHDHA
26.6
28.3
29.4
V
14b
M HD high voltage monitor deassert trippoint high
V
HVHDHD
26.2
27.9
29
V
15
C HD high voltage monitor filter time constant
(6)
τ
HVHD
—
2.7
4
µ
s
16
D HG/LG turn on time vs 10nF load (fastest slew)
(7)
t
HGON
120
190
340
ns
17
D HG/LG turn on time vs 10nF load (slowest slew)
t
HGON
350
560
980
ns
18a
D HG/LG turn off time vs 10nF load
(8)
, -40
°
C < T
j
< 150
°
C
t
HGOFF
55
90
180
ns
18b
D HG/LG turn off time vs 10nF load
°
C < T
j
< 175
°
C
t
HGOFF
55
90
190
ns
19
D PMF control to HG/LG start of turn on delay
t
delon
0.52
0.75
0.98
µ
s
20
D PMF control to HG/LG start of turn off delay
t
deloff
0.31
0.45
0.59
µ
s
21
D Minimum PMF driver on/off pulse width (fastest slew)
t
minpulse
2
—
—
µ
s
22a
P VBS to HG, VLSx to LGx RDSon (driver on state)
(9)
-40
°
C < T
j
< 150
°
C
R
gduon
—
6.3
11.6
Ω
22b
M VBS to HG, VLSx to LGx RDSon (driver on state)
150
°
C < T
j
< 175
°
C
R
gduon
—
8.4
13.6
Ω
23a
P HGx to HSx, LGx to LSx RDSon (driver off state)
nmos part, -40
°
C < T
j
< 150
°
C
R
gduoffn
—
4
9
Ω
23b
M HGx to HSx, LGx to LSx RDSon (driver off state)
(10)
nmos
part, 150
°
C < T
j
< 175
°
C
R
gduoffn
—
7
11
Ω