MC9S12ZVM Family Reference Manual Rev. 1.3
Freescale Semiconductor
686
19.1
Introduction
The FTMRZ128K512 module implements the following:
•
128 KB of P-Flash (Program Flash) memory
•
512 bytes of EEPROM memory
The Flash memory is ideal for single-supply applications allowing for field reprogramming without
requiring external high voltage sources for program or erase operations. The Flash module includes a
memory controller that executes commands to modify Flash memory contents. The user interface to the
memory controller consists of the indexed Flash Common Command Object (FCCOB) register which is
written to with the command, global address, data, and any required command parameters. The memory
controller must complete the execution of a command before the FCCOB register can be written to with a
new command.
CAUTION
A Flash word or phrase must be in the erased state before being
programmed. Cumulative programming of bits within a Flash word or
phrase is not allowed.
The Flash memory may be read as bytes and aligned words. Read access time is one bus cycle for bytes
and aligned words. For misaligned words access, the CPU has to perform twice the byte read access
command. For Flash memory, an erased bit reads 1 and a programmed bit reads 0.
It is possible to read from P-Flash memory while some commands are executing on EEPROM memory. It
is not possible to read from EEPROM memory while a command is executing on P-Flash memory.
Simultaneous P-Flash and EEPROM operations are discussed in
Both P-Flash and EEPROM memories are implemented with Error Correction Codes (ECC) that can
resolve single bit faults and detect double bit faults. For P-Flash memory, the ECC implementation
requires that programming be done on an aligned 8 byte basis (a Flash phrase). Since P-Flash memory is
always read by half-phrase, only one single bit fault in an aligned 4 byte half-phrase containing the byte
or word accessed will be corrected.
19.1.1
Glossary
Command Write Sequence
— An MCU instruction sequence to execute built-in algorithms (including
program and erase) on the Flash memory.
EEPROM Memory
— The EEPROM memory constitutes the nonvolatile memory store for data.
EEPROM Sector
— The EEPROM sector is the smallest portion of the EEPROM memory that can be
erased. The EEPROM sector consists of 4 bytes.
