DocID018909 Rev 11
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RM0090
Power controller (PWR)
149
When the backup domain is supplied by V
BAT
(analog switch connected to V
BAT
because
V
DD
is not present), the following functions are available:
•
PC14 and PC15 can be used as LSE pins only
•
PC13 can be used as the RTC_AF1 pin (refer to
for more
details about this pin configuration)
•
PI8 can be used as RTC_AF2
Backup domain access
After reset, the backup domain (RTC registers, RTC backup register and backup SRAM) is
protected against possible unwanted write accesses. To enable access to the backup
domain, proceed as follows:
•
Access to the RTC and RTC backup registers
1.
Enable the power interface clock by setting the PWREN bits in the RCC_APB1ENR
register (see
and
)
2. Set the DBP bit in the
PWR power control register (PWR_CR) for
to enable access to the backup domain
3. Select the RTC clock source: see
4. Enable the RTC clock by programming the RTCEN [15] bit in the
Backup domain control register (RCC_BDCR)
•
Access to the backup SRAM
1.
Enable the power interface clock by setting the PWREN bits in the RCC_APB1ENR
register (see
and
for STM32F405xx/07xx and
STM32F415xx/17xx and STM32F42xxx and STM32F43xxx, respectively)
2. Set the DBP bit in the
PWR power control register (PWR_CR) for STM32F405xx/07xx
and
PWR power control register (PWR_CR) for
to enable access to the backup domain
3. Enable the backup SRAM clock by setting BKPSRAMEN bit in the
peripheral clock enable register (RCC_AHB1ENR)
RTC and RTC backup registers
The real-time clock (RTC) is an independent BCD timer/counter. The RTC provides a time-
of-day clock/calendar, two programmable alarm interrupts, and a periodic programmable
wakeup flag with interrupt capability. The RTC contains 20 backup data registers (80 bytes)
which are reset when a tamper detection event occurs. For more details refer to
.
Backup SRAM
The backup domain includes 4 Kbytes of backup SRAM addressed in 32-bit, 16-bit or 8-bit
mode. Its content is retained even in Standby or V
BAT
mode when the low-power backup
regulator is enabled. It can be considered as an internal EEPROM when V
BAT
is always
present.
When the backup domain is supplied by V
DD
(analog switch connected to V
DD
), the backup
SRAM is powered from V
DD
which replaces the V
BAT
power supply to save battery life.
When the backup domain is supplied by V
BAT
(analog switch connected to V
BAT
because
V
DD
is not present), the backup SRAM is powered by a dedicated low-power regulator. This
regulator can be ON or OFF depending whether the application needs the backup SRAM
function in Standby and V
BAT
modes or not. The power-down of this regulator is controlled