Figure 27-17. ESD Protection for Non-Power Pins (Except WAKE Signal)
Table 27-37. Non-Power I/O Pad Voltage/Current Characteristics
abc
Unit
Max
Nom
Min
Parameter Name
Parameter
V
V
DD
+0.3
V
DD
-0.3
IO pad voltage limits if voltage protected
V
IO
d
nA
400
-
-
Positive IO leakage for V
DD
≤ V
IN
≤V
IO
MAX
e
I
LKG+
µA
60
-
-
Negative IO leakage for V
IO
MIN ≤ V
IN
≤ 0V
e
I
LKG-
mA
2
-
-
Max positive injection if not voltage protected
f
I
INJ+
mA
-0.5
-
-
Max negative injection if not voltage protected
f
I
INJ-
a. To avoid potential damage to the part, either the voltage or current on the non-Power, non-WAKE input/outputs should
be limited externally as shown in this table.
b. Note that for the ADC's external reference inputs, care must be taken to avoid a current limiting resistor (refer to IVREF
spec in Table 27-44 on page 1861)
c. I/O pads should be protected if at any point the IO voltage has a possibility of going outside the limits shown in the table.
If the part is unpowered, the IO pad Voltage or Current must be limited (as shown in this table) to avoid powering the
part through the IO pad, causing potential irreversible damage.
d. The Hibernate
XOSC
pins are non-failsafe and should follow the limits for V
IO
with respect to both V
DD
and V
BAT
. Thus V
IO
for the HIB XOSC pins should also fall within a MIN of -0.3 and a MAX of V
BAT
+ 0.3.
e. MIN and MAX leakage current for the case when the I/O is voltage protected to V
IO
Min or V
IO
Max.
f. If the I/O pad is not voltage limited, it should be current limited (to I
INJ
+ and I
INJ-
) if there is any possibility of the pad voltage
exceeding the V
IO
limits (including transient behavior during supply ramp up, or at any time when the part is unpowered).
June 18, 2014
1852
Texas Instruments-Production Data
Electrical Characteristics