27.12
Flash Memory
Table 27-32. Flash Memory Characteristics
Unit
Max
Nom
Min
Parameter Name
Parameter
cycles
-
-
100,000
Number of program/erase cycles
a
PE
CYC
years
-
-
20
Data retention with 100% power-on hours at
T
J
=85˚C
T
RET
years
-
-
11
Data retention with 10% power-on hours at
T
J
=125˚C and 90% power-on hours at T
J
=100˚C
T
RET_EXTEMP
µs
300
100
30
Program time for double-word-aligned (64 bits)
data
b
T
PROG64
ms
15
8
-
Page erase time, <1k cycles
T
ERASE
ms
40
15
-
Page erase time, 10k cycles
ms
500
75
-
Page erase time, 100k cycles
ms
25
10
-
Mass erase time, <1k cycles
T
ME
ms
70
20
-
Mass erase time, 10k cycles
ms
2500
300
-
Mass erase time, 100k cycles
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
b. If programming fewer than 64 bits of data, the programming time is the same. For example, if only 32 bits of data need
to be programmed, the other 32 bits are masked off.
1847
June 18, 2014
Texas Instruments-Production Data
Tiva
™
TM4C1294NCPDT Microcontroller