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TC1784
Program Memory Unit (PMU)
User´s Manual
5-12
V1.1, 2011-05
PMU, V1.47
•
User controlled configuration blocks (UCB) in configuration sector for keywords and
for sector-specific lock bits (one block for every user; up to three users).
•
Pad supply voltage also used for program and erase (no VPP pin).
•
Efficient 256 byte page program operation.
•
Programming time: typ. 5 msec per page.
•
All Flash operations controlled by CPU per command sequences (unlock sequences)
for protection against unintended operation.
•
Write state machine for automatic program and erase, including verification of
operation quality.
•
End-of-busy as well as error reporting with interrupt and bus error trap.
•
Support of margin check.
•
Erase time per sector: max. 5 sec.
•
Delivery in erased state (read all zeros).
•
Global and sector specific status information.
•
Overlay support for calibration applications.
•
Configurable wait state selection for different CPU frequencies
•
Endurance = 1000; allowed number of program/erase cycles per physical sector;
reduced endurance of 100 per 16 KB sector.
•
Operating lifetime (incl. Retention): 20 years with endurance = 1000.
•
For further operating conditions see data sheet.
Summary of Data Flash Features and Functions
•
128 Kbyte on-chip Flash, configured in two independent Flash banks of equal size.
•
Sector architecture: one sector per bank.
•
64 bit read interface.
•
Erase/program one bank while data read access from the other bank.
•
Programming one bank while erasing the other bank using an automatic
suspend/resume function.
•
Dynamic correction of single-bit errors during read access.
•
Read access time: 50 ns.
•
128 byte pages to be written in one step.
•
Selectable read/write protection in combination with PFlash read protection.
•
Programming time: typ. 15 msec per page.
•
Operational control per command sequences (unlock sequences, same as those of
Program Flash) for protection against unintended operation.
•
End-of-busy as well as error reporting with interrupt and bus error trap.
•
Write state machine for automatic program and erase.
•
Margin check for detection of problematic Flash bits.
•
Erase time per sector: max. 2.5 sec. (increased for low frequencies).
•
Endurance = 60000; i.e. 60000 program/erase cycles per sector are allowed, with a
retention of min. 5 years
1)
•
Dedicated DFlash status information.
Содержание TC1784
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Страница 950: ...TC1784 Direct Memory Access Controller DMA User s Manual 11 132 V1 1 2011 05 DMA V3 03 ...
Страница 1949: ...TC1784 General Purpose Timer Array GPTA v5 User s Manual 21 297 V1 1 2011 05 GPTA v5 V1 14 ...
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