Registers
902
SPRUH82C – April 2013 – Revised September 2016
Copyright © 2013–2016, Texas Instruments Incorporated
External Memory Interface A (EMIFA)
Table 19-51. SDRAM Configuration Register (SDCR) Field Descriptions (continued)
Bit
Field
Value
Description
11-9
CL
0-7h
CAS Latency. This field defines the CAS latency to be used when accessing connected SDRAM
devices. A 1 must be simultaneously written to the BIT11_9LOCK bit field of this register in order to
write to the CL bit field. Writing to this field triggers the SDRAM initialization sequence.
0-1h
Reserved
2h
CAS latency = 2 EMA_CLK cycles
3h
CAS latency = 3 EMA_CLK cycles
4h-7h
Reserved
8
BIT11_9LOCK
Bits 11 to 9 lock. CL can only be written if BIT11_9LOCK is simultaneously written with a 1.
BIT11_9LOCK is always read as 0. Writing to this field triggers the SDRAM initialization sequence.
0
CL cannot be written.
1
CL can be written.
7
Reserved
0
Reserved. The reserved bit location is always read as 0. If writing to this field, always write the
default value of 0.
6-4
IBANK
0-7h
Internal SDRAM Bank size. This field defines number of banks inside the connected SDRAM
devices. Writing to this field triggers the SDRAM initialization sequence.
0
1 bank SDRAM devices.
1
2 bank SDRAM devices.
2
4 bank SDRAM devices.
3h-7h
Reserved.
3
Reserved
0
Reserved. The reserved bit location is always read as 0. If writing to this field, always write the
default value of 0.
2-0
PAGESIZE
0-7h
Page Size. This field defines the internal page size of connected SDRAM devices. Writing to this
field triggers the SDRAM initialization sequence.
0
8 column address bits (256 elements per row)
1h
9 column address bits (512 elements per row)
2h
10 column address bits (1024 elements per row)
3h
11 column address bits (2048 elements per row)
4h-7h
Reserved