![Texas Instruments AM1808 Скачать руководство пользователя страница 895](http://html.mh-extra.com/html/texas-instruments/am1808/am1808_technical-reference-manual_1094558895.webp)
Example Configuration
895
SPRUH82C – April 2013 – Revised September 2016
Copyright © 2013–2016, Texas Instruments Incorporated
External Memory Interface A (EMIFA)
19.3.2.3.3 Example Using Hynix HY27UA081G1M
This section takes you through the configuration steps required to implement Hynix’s HY27UA081G1M
NAND Flash with the EMIFA. The following assumptions are made:
•
NAND Flash is connected to chip select space 2 (EMA_CS[2])
•
EMIFA clock speed is 100 MHz (t
cyc
= 10 nS)
lists the data sheet specifications for the EMIFA and
lists the data sheet
specifications for the NAND Flash.
(1)
Depending on operating conditions. See your device-specific data manual for the value.
Table 19-44. EMIFA Timing Requirements for HY27UA081G1M Example
Parameter
Description
Min
Max
Units
t
SU
Data Setup time, data valid before EMA_OE high
3 to 7
(1)
nS
t
H
Data Hold time, data valid after EMA_OE high
0
nS
Table 19-45. NAND Flash Timing Requirements for HY27UA081G1M Example
Parameter
Description
Min
Max
Units
t
RP
Read Pulse width
60
nS
t
REA
Read Enable Access time
60
nS
t
CEA
Chip Enable low to output valid
75
nS
t
CHZ
Chip Enable high to output High-Z
20
nS
t
RC
Read Cycle time
80
nS
t
RHZ
Read Enable high to output High-Z
30
nS
t
CLR
Command Latch low to Read enable low
10
nS
t
WP
Write Pulse width
60
nS
t
CLS
CLE Setup time
0
nS
t
ALS
ALE Setup time
0
nS
t
CS
CS Setup time
0
nS
t
DS
Data Setup time
20
nS
t
CLH
CLE Hold time
10
nS
t
ALH
ALE Hold time
10
nS
t
CH
CS Hold time
10
nS
t
DH
Data Hold time
10
nS
t
WC
Write Cycle time
80
nS