K465i Operations and Maintenance
Doc 1100481 Rev C
Page 3-1
Copyright
©
2012
Veeco Instruments, Inc. Confidential
All Rights Reserved
CHAPTER 3.
SYSTEM OVERVIEW
This chapter includes a high-level view of the system components and the K465i GaN
system’s function.
Figure 3-1. K465i GaN MOCVD
At the core of the Veeco TurboDisc™ MOCVD products is a process for fabricating
microelectronic devices based on engineering developments and principles. The device
described in this document exercises control over wafer deposition (atom-thin layers of
material deposited on a wafer) by controlling the introduction of gases and other materials
in sequence, introduced into a carefully heated, pressurized chamber. The wafer rotates
horizontally at controlled speeds in the reactor chamber, allowing further control over the
deposition, and the gases and materials flow through the chamber and into cooling and
filtration systems that promote equipment longevity and user safety. Numerous
electromechanical devices govern the flow and timing of gases and other materials, reactor
pressure and vacuum, cooling systems and maintenance.
A system architecture view helps to understand the controls/communication structure of the
K465i GaN system (
